Studying of some physical properties of screen printed of hazardous carcinogenic lead iodide thick films doped with aluminum
Paper Details
Studying of some physical properties of screen printed of hazardous carcinogenic lead iodide thick films doped with aluminum
Abstract
Lead iodide considers as one of the chemicals that is on the Special Health Hazard Substance List (SHHSL) and it is consider as carcinogenetic substance. In this study films of 12µm thick toxic PbI2 pure and doped with various atomic volumes doping concentration of Al (1, 2, 3, & 4 mil) were deposited, and their physical properties were investigated different poisonous concentrations of hazardous lead iodide. The films were set by screen printing on glass substrates at room temperatures. X-Ray diffraction of deposited films shows raising the peak intensity with increasing dopant concentration. Energy gap decreases with increasing dopant concentration. Doping of Lead Iodide film with specific amount of Al will increase the electrical resistivity with increasing the dopant concentration, while decrease mobility.
Bhavsar DS. 2011. Comparative studies of band gaps of doped Lead Iodide thin films, Advances in Applied Science Research 2(4), 92-97.
Cullity BD, Stock SR. 2001. Elements of X – Ray Diffraction, Third edition, Prentice-Hall in the United States of America.
David DC, Burger A, Wang W, James RB, Schlesmger TE, Lund GC. 1992. Lead iodide crystals for use in gamma-ray detection The International Society for Optical Engineering journal, 1734, 146-151. http://dx.doi.org/10.1117/12.138583
Hamza Habib M, Essam El-Zahar R, Ahmed Ebady M. 2013. Prediction of Wavy Liquid Film Profile for Thin Film on a Falling Film Absorber, Applied Mathematics 4(5), 785-791. http://dx.doi.org/10.4236/am.2013.45107
Hong D, Larry E, Youcef El, Qihua Z, Zhong S, Jin Y, Yi W. 2008. Investigation of the signal behavior at diagnostic energies of prototype, direct detection, active matrix, flat-panel imagers incorporating polycrystalline HgI2, Physics in Medicine and Biology 53(5), 1325-1353.
Iness RB, Anne-Laure MM, Endre H, Lászlo F. 2015. Health hazard of the Methylammonium Lead Iodide based Perovskites: cytotoxicity studies. Toxicology Research 5(2), 1-32. http://dx.doi.org/10.1039/C5TX00303B
Jamil S, Mousa A, Mohammad M, Thajeel K. 2013. Growth and Characterization of PbI2 Thin Films by Vacuum Thermal Evaporation, Engineering and Technology. Journal 24, 1-6.
Kashikhin VS, Andreev N, Kerby J, Orlov Y, Solyak N, Tartaglia M, Velev G. 2012. Superconducting Splittable Quadrupole Magnet for Linear Accelerators, IEEE Transactions on Applied Superconductivity 22(3), 751-776. http://dx.doi.org/10.1109/TNS.2015.2485159
Kucytowski J, Wokulska K. 2005. Lattice parameter measurements of boron doped Si single crystals, Crystal Research and Technology 40, 424-428.
Lin JC, Leez C. 1999. Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films, Journal of The Electrochemical Society 146(9), 3466-3471.
Matuchova M, Zdansky K, Zavadil J, Tonn J, Mousa M, Danilewsky AN. 2010. Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection, Journal of Crystal Growth 312, 1233-1239.
Mousa A & Al-rubaie N. 2009. The Influence of Deposition Conditions on Structural Properties of PbI2, Hindawi Publishing Corporation, Texture, Stress, and Microstructure 1, 1-7. http://dx.doi.org/10.1155/2009/494537
Mousa A, Al-rubaie N. 2011. Properties of Layered PbI2 Doped with Al and Co, Journal of Materials Science and Engineering 5, 32-40.
Park CJ, Yang W.-C, Cho H. Y, Kim MC, Kim S, Choi SH. 2007. Effect of Si-spacer thickness on optical properties of multi-stacked Ge quantum dots grown by rapid thermal chemical vapor deposition, Journal of Applied Physics 101, 014304.
Paul YD, Leonard RB, Cirignano MK, Shah S. 2008. PbI2 thick films: Growth, properties, and problems, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 584(1), 165-173.
Reiss H, Mirabel P, Whetten RL. 1988. Capillarity theory for the “coexistence” of liquid and solid clusters, Journal of Physics and Chemistry 92, 7241-7246.
Scot R, B.Sc. 2012. Thesis, Department of Physics and Astronomy Brigham Young University – Idaho.
Street RA, Ready SE, Rahn JT, Mulato M, Shah K, Lemmi F, Boyce J, Nylen P, Schieber M. 2002. Comparison of PbI2 and HgI2 for direct detection active matrix x-ray image sensors, Applied Physics Letters 91, 3345. https://doi.org/10.1063/1.1436298
Williamson GK, Smallman RE. 1956. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum, Philosophical Magazine 1(1), 34-46. http://dx.doi.org/10.1080/14786435608238074
Zuck A, Schieber M, Khakhan O, Burshtein Z. 2003. Near single-crystal electrical properties of polycrystalline HgI2 produced by physical vapor deposition. IEEE Transactions on Nuclear Science, 50, 991–997.
Jaafar M. Moosa, 2018. Studying of some physical properties of screen printed of hazardous carcinogenic lead iodide thick films doped with aluminum. Int. J. Biosci., 13(3), 154-164.
Copyright © 2018 by the Authors. This article is an open access article and distributed under the terms and conditions of the Creative Commons Attribution 4.0 (CC BY 4.0) license.